Electronic and Optoelectronic Devices (B-KUL-H06D1A)
Aims
- The student gets a deeper insight into the limitations of models used to simplify the physics of semiconductor devices (for instance, the gradual channel approximation in MOSFETs). This teaching will allow him/her to understand the limitations of the validity of models in the future, as dimensions of semiconductor devices keep scaling.
- The student will increase his/her knowledge about semiconductor device physics, with concepts such as heterojunctions and graded material properties (such as graded doping, graded bandgaps). He will be able to apply these concepts in the design of components such as heterojunction transistors.
- The student learns about lasers and other opto-electronic devices. He will understand the fundamental concepts used to deal with photon interactions in a semiconductor material (such as the photon density of states, absorption loss and gain, …). He will understand the physical operation of a semiconductor laser, and apply them in design.
- The student will work hands-on with device simulators, in which he will implement some model devices and learn how simulators help designers in making trade-offs.
Previous knowledge
Necessary basis to disciplines as offered in the introductory course H06F0A Semiconductor devices.
Identical courses
This course is identical to the following courses:
H05L6A : Electronische en optoelectronische componenten
Is included in these courses of study
- Master of Nanoscience, Nanotechnology and Nanoengineering (Leuven) 120 ects.
- Master of Nanoscience, Nanotechnology and Nanoengineering (Leuven) (Option: Nanophysics Engineering) 120 ects.
- Courses for Exchange Students Faculty of Engineering Science (Leuven)
- Erasmus Mundus Master of Science in Nanoscience and Nanotechnology (Leuven et al) 120 ects.
Activities
2.4 ects. Electronic and Optoelectronic Devices: Lecture (B-KUL-H06D1a)
Content
This course is an advanced course on semiconductor devices, that will allow you to understand modern scaled devices, heterojunctions and opto-electronic devices.
The MOS transistor operation is analysed in some detail, and from there, we derive the assumptions underlying the common static MOS transistor models, such as the gradual channel approximation, and the implications for situations where the assumptions break down. We then expand our analysis to the quasi-static and small-signal operation.
Next, we explain the concept and properties of semiconductor heterojunctions. As practical example, we derive the essential characteristics of heterojunction bipolar transistors.
Finally, the bulk of the course deals with opto-electronic semiconductor devices. We first explain the fundamentals of interactions of photons in semiconductors, and the processes of spontaneous emission, absorption, and stimulated emission. We apply these to derive characteristics and properties of light-emitting diodes, and then of semiconductor lasers.
0.6 ects. Electronic and Optoelectronic Devices: Exercises and Labs (B-KUL-H06D2a)
Content
In the exercise and lab sessions, the student will acquire more insights in semiconductor device operation by performing hands-on simulations using advanced modelling software.
We foresee sessions for training with the tools.
Two types of modelling will be practiced: a device simulator, that gives insights into the internal processes during operation (for example of a laser); and a circuit simulator.
Evaluation
Evaluation: Electronic and Optoelectronic Devices (B-KUL-H26D1a)
Explanation
The examination is in written form. No course material or books are allowed.
The questions will examine following:
- Does the student understand the physical meaning and the limitations of any “formula” used to describe a phenomenon in semiconductor devices?
- Can the student correctly apply models and physical operation principles in an exercise?
- Does the student know the basic principles that govern the operation of semiconductor devices, and can he describe and explain them?