Elaboration of Nanostructures / Physics of 2D Materials (B-KUL-H08Q0A)

3 ECTSEnglishFirst termCannot be taken as part of an examination contractCannot be taken as part of a credit contract
N.
Extern Université Grenoble Alpes
POC Nanowetenschappen en nanotechnologie

The goal of this course is to introduce the crystal growth techniques and the physics of nanostructures. Both aspects will be mostly illustrated by examples taken in field of semiconductor nanostructures and 2D materials.

General concepts in physics, solid state physics and material science.

Activities

3 ects. Elaboration of Nanostructures / Physics of 2D Materials (B-KUL-H08Q0a)

3 ECTSEnglishFormat: LectureFirst term
N.
POC Nanowetenschappen en nanotechnologie

Part I: Epitaxy of semiconductor nanostructures

The goal of part is to introduce the crystal growth techniques of nanostructures, illustrated by examples taken in field of semiconductor nanostructures. After an introduction of the basics of the epitaxy, the elastic strain will be discussed in the case of planar heteroepitaxy leading to elastic or plastic deformations. Thus, the different ways to growth nanostructure from quantum wells to quantum dots will be presented. Additionally, last advances on nanostructures growth will be presented by introducing the selective area growth (SAG) and the Van Der Waals epitaxy (VDWE).

Chap. 1: Epitaxy basics and growth techniques.

  • Homoepitaxy, Vicinal surfaces, Physisorption/chemisorptions
  • Frank-Van der Merwe growth
  • Ehrlich Schwöbel barrier and surface morphology
  • Growth techniques: Molecular beam epitaxy and chemical vapor deposition

 

Chap. 2: Heteroepitaxy: from elastic strain to plastic relaxation.

  • Pseudomorphic/metamorphic growths
  • Elastic biaxial strain model
  • Plastic relaxation by misfit dislocation formation: importance of the critical thickness
  • Elastic relaxation: Stranski-Krastanow growth mode
  • Evolution of growth modes: Competition between surface energy and elastic energy

 

Chap. 3: Growth of semiconductor nanostructures

  • Epitaxial growth of quantum wells (2D) to quantum dots (0D)
  • Epitaxial of quantum nanowires (1D): catalyst and catalyst-free growths
  • Selective area growth (SAG)
  • Van der Waals epitaxy (VDWE) of 2D semiconductor material – Remote epitaxy
  • Hybrid growths

 

Part II:  Electronic properties of graphene and 2D materials: transport and optical properties:

II.1 Conventional 2D electron gases (2DEG) in semiconductor heterostructures

II.2 Electronic properties of graphene heterostructures

  •  II.2.1 Introduction
  •  II.2.2 Material and tight binding band structure
  • II.2.3 Hall bar devices and basic transport properties
  • II.2.4 Quantum transport: integer quantum Hall effect
  • II.2.5 Optical properties

II.3 Review of other 2D materials: twisted graphene bilayers, transition metal dichalcogenides, topological insulators.

Text book, articles and literature, slides.

Evaluation

Evaluation: Elaboration of Nanostructures / Physics of 2D Materials (B-KUL-H28Q0a)

Type : Exam during the examination period
Description of evaluation : Written