Elaboration of Nanostructures / Physics of 2D Materials (B-KUL-H08Q0A)
Aims
The goal of this course is to introduce the crystal growth techniques and the physics of nanostructures. Both aspects will be mostly illustrated by examples taken in field of semiconductor nanostructures and 2D materials.
Previous knowledge
General concepts in physics, solid state physics and material science.
Is included in these courses of study
Activities
3 ects. Elaboration of Nanostructures / Physics of 2D Materials (B-KUL-H08Q0a)
Content
Part I: Epitaxy of semiconductor nanostructures
The goal of part is to introduce the crystal growth techniques of nanostructures, illustrated by examples taken in field of semiconductor nanostructures. After an introduction of the basics of the epitaxy, the elastic strain will be discussed in the case of planar heteroepitaxy leading to elastic or plastic deformations. Thus, the different ways to growth nanostructure from quantum wells to quantum dots will be presented. Additionally, last advances on nanostructures growth will be presented by introducing the selective area growth (SAG) and the Van Der Waals epitaxy (VDWE).
Chap. 1: Epitaxy basics and growth techniques.
- Homoepitaxy, Vicinal surfaces, Physisorption/chemisorptions
- Frank-Van der Merwe growth
- Ehrlich Schwöbel barrier and surface morphology
- Growth techniques: Molecular beam epitaxy and chemical vapor deposition
Chap. 2: Heteroepitaxy: from elastic strain to plastic relaxation.
- Pseudomorphic/metamorphic growths
- Elastic biaxial strain model
- Plastic relaxation by misfit dislocation formation: importance of the critical thickness
- Elastic relaxation: Stranski-Krastanow growth mode
- Evolution of growth modes: Competition between surface energy and elastic energy
Chap. 3: Growth of semiconductor nanostructures
- Epitaxial growth of quantum wells (2D) to quantum dots (0D)
- Epitaxial of quantum nanowires (1D): catalyst and catalyst-free growths
- Selective area growth (SAG)
- Van der Waals epitaxy (VDWE) of 2D semiconductor material – Remote epitaxy
- Hybrid growths
Part II: Electronic properties of graphene and 2D materials: transport and optical properties:
II.1 Conventional 2D electron gases (2DEG) in semiconductor heterostructures
II.2 Electronic properties of graphene heterostructures
- II.2.1 Introduction
- II.2.2 Material and tight binding band structure
- II.2.3 Hall bar devices and basic transport properties
- II.2.4 Quantum transport: integer quantum Hall effect
- II.2.5 Optical properties
II.3 Review of other 2D materials: twisted graphene bilayers, transition metal dichalcogenides, topological insulators.
Course material
Text book, articles and literature, slides.