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Identical coursesElectronic Transport in Solids and Nanostructures (B-KUL-H0G03A)
POC Fysica en sterrenkunde
Aims
The aim of the course is to provide a general survey of the electronic transport properties of bulk solids and nanostructures. The students will learn the methods and models used to describe the electronic transport properties of metals, semiconductors, and their heterostructures. The students will also become familiar with the transport processes occuring in materials and devices with reduced dimensions: tunneling and resonant-tunneling effect, ballistic transport, quantum Hall effect, Aharonov-Bohm effect.
Is included in these courses of study
- Doctoral Programme in Engineering Science (Leuven)
- Courses for Exchange Students Faculty of Science (Leuven)
- Master in de nanowetenschappen, nanotechnologie en nano-engineering (Leuven) 120 ects.
- Master in de nanowetenschappen, nanotechnologie en nano-engineering (Leuven) (Optie nanofysica engineering) 120 ects.
- Master in de nanowetenschappen, nanotechnologie en nano-engineering (programma voor industrieel ingenieurs of master industriële wetenschappen - aanverwante richting) (Leuven) (Optie nanofysica engineering) 120 ects.
- Master of Nanoscience, Nanotechnology and Nanoengineering (Leuven) 120 ects.
- Master of Nanoscience, Nanotechnology and Nanoengineering (Leuven) (Option: Nanophysics Engineering) 120 ects.
- Courses for Exchange Students Faculty of Engineering Science (Leuven)
- Master of Physics (Leuven) 120 ects.
- Erasmus Mundus Master of Science in Nanoscience and Nanotechnology (Leuven et al) 120 ects.
Activities
3 ects. Electronic Transport in Solids and Nanostructures (B-KUL-H0G03a)
Content
- Part I: Transport in (bulk) solids
1. Introduction – classical theory of transport in solids
2. The Boltzmann transport equation
3. The relaxation time approximation
4. Electronic transport in metals and semiconductors
5. Effect of an external magnetic field – Hall effect and magnetoresistance
6. Localization and metal-insulator transition in disordered solids - Part II: Transport in nanostructures
7. Ballistic regime - transport in 2DEG
8. Landauer approach
9. The NEGF method – application to ballistic and quasi-ballistic transport
10. Tunneling and resonant tunneling effect in heterostructures
11. Aharonov-Bohm effect in mesoscopic rings
12. Quantum Hall effect in 2DEG
13. Electronic properties of graphene – half-integer quantum Hall effect
Course material
Mark Lundstrom, "Fundamentals of Carrier Transport" (Cambridge University Press)
David Ferry, "Transport in Semiconductor Mesoscopic Devices" (IOP Publishing)
Evaluation
Evaluation: Electronic Transport in Solids and Nanostructures (B-KUL-H2G03a)
Type : Exam during the examination period
Description of evaluation : Oral
Type of questions : Closed questions
Learning material : List of formulas