Electronic Transport (B-KUL-H0G03A)

3.0 ECTS English 19.5 Second termSecond term Advanced
Stesmans Andre (coordinator) |  Houssa Michel |  Stesmans Andre
POC Fysica

The aim of the course is to provide a general survey of the electronic transport properties of semiconductors and metals, both regarding the electrical and thermal parts. The emphasis is more on physical than on analysis of practical devices.

  • general introduction to electronic transport in solids
  • Boltzmann approach within the spherical one valley model: conduction in degenerate and non-degenerate electron gases
  • thermal transport
  • transport in metals
  • effects of additionally applied magnetic and thermal fields
  • influence of inhomogeneities and carrier gradients
  • identification of scattering mechanisms
  • ineleastic scattering
  • diffusion of carriers in semiconductors
  • the metal-semiconductor contact
  • diffusion and photon absorption effects
  • validity of the Boltzmann approach
  • the sample size effects in metals
  • quantum effects

Activities

3.0 ects. Electronic Transport (B-KUL-H0G03a)

3.0 ECTS English 19.5 Second termSecond term
POC Fysica

Semiconductor part: Parts of K. Seeger, Semiconductor Physics (Springer-Verlag, Berlin, 1985, 3rd edition).
Metal part: course notes by lecturer.

Evaluation